Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon

Single spin qubits based on phosphorus donors in silicon are a promising candidate for large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains hurdle scale-up due to challenges high-frequency field at the nanometre scale. Here, we present proposal flopping-mode electric dipole resonance qubit combined electron and nuclear states of double donor dot. The key advantage utilizing donor-based system is that can engineer number nuclei each By creating multidonor dots with antiparallel multielectron occupation minimize longitudinal gradient, known couple charge noise into device dephase qubit. We describe operation show by minimizing hyperfine interaction spins achieve $\ensuremath{\pi}/2\ensuremath{-}X$ gate error rates about ${10}^{\ensuremath{-}4}$ using realistic models. highlight low environment these all-epitaxial phosphorus-doped will facilitate realization strong coupling superconducting microwave cavities, allowing long-distance two-qubit operations.